Part Number Hot Search : 
RLU962 PD3016 M27C512 821BA 222ME DO1605T LTC2978 HER208
Product Description
Full Text Search

LET9006 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9006_4186333.PDF Datasheet


 Full text search : RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package


 Related Part Number
PART Description Maker
GRM21BR71H104KA01B GRM21BR71H105KA12L 2508051107Y0 RF Power LDMOS Transistors
Freescale Semiconductor, Inc
Freescale Semiconductor...
GRM21BR72A103KA01B ATC600F220JT250XT ATC600F300JT2 RF Power LDMOS Transistors
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Freescale Semiconductor...
LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
STMICROELECTRONICS[STMicroelectronics]
MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 M RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
   RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor, Inc
Freescale Semiconductor...
BLF6G21-10G Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
NXP Semiconductors N.V.
BLF7G22LS-100P Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
NXP Semiconductors N.V.
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
1011LD110 RF Power Transistors: AVIONICS
110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
ADPOW[Advanced Power Technology]
BLF7G27L-90P BLF7G27LS-90P 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
NXP Semiconductors N.V.
 
 Related keyword From Full Text Search System
LET9006 international LET9006 serial LET9006 filetype:pdf LET9006 equivalent ic LET9006 image sensor
LET9006 Output LET9006 技术参数 LET9006 技术参数 LET9006 ultra LET9006 varactor
 

 

Price & Availability of LET9006

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
4.3611259460449